A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Jiang Chongyu Zhejiang University
P /P1
2021年08月27日 12:25~12:30
公开 张贴报告
Modeling and Experimental Verification of Common Mode Crosstalk with Shield Cables in Power Converter System
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Xue Ruizhou Huazhong University of Science and Technology
P /P4
2021年08月27日 12:20~12:25
公开 张贴报告
Dual-Side Three-stage Asymmetric Phase Shift Strategy for Bidirectional Inductive Power Transfer System with SiC Power Module
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Chen Haowen Huazhong University of Science and Technology,School of Electrical and Electronic Engineering
P /P5
2021年08月27日 12:05~12:10
公开 张贴报告
Analytical Averaged Loss Model of a Three-level NPC-type Converter With SiC Devices
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Guo Xinyue Huazhong University of Science and Technology,School of Electrical and Electronic Engineering
P /P3
2021年08月27日 12:10~12:15
公开 张贴报告
Power Loss Characterictics comparsion of the Modular Multilevel Multilevel Converter Based on Based on Si IGBT and SiC MOSFET
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Yin Tianxiang Huazhong University of Science and Technology
P /P3
2021年08月27日 12:35~12:40
公开 张贴报告
Single-Pulse Avalanche Failure Characterization of Single and Paralleled SiC MOSFETs
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Mao Hua Chongqing university
P /P4
2021年08月27日 12:15~12:20
公开 张贴报告
DC Transform Circuit Design Based on Multiplier Rectification
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Yin Penghui Huazhong University of Science and Technology,State Key Laboratory of Advanced Electromagnetic Engineering and Technology
P /P5
2021年08月27日 13:05~13:10
公开 张贴报告
The Influence of Gate Resistances on the Turn-on Behaviors of Si/SiC Hybrid Switch
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Jiang Xiaofeng Chongqing university
P /P3
2021年08月27日 12:20~12:25
公开 张贴报告
An Optimal Design Scheme of Intermediate Bus Voltage for two-stage LLC Resonant Converter Based on SiC MOSFET
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
wang feng Huazhong University of Science and Technology,State Key Laboratory of Advanced Electromagnetic Engineering and Technology
P /P2
2021年08月27日 12:50~12:55
公开 张贴报告
An Improved Desaturation Protection Method with Self-Adaptive Blanking-Time for Silicon Carbide (SiC) Power MOSFETs
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Li Jiawei Huazhong University of Science and Technology
P /P4
2021年08月27日 12:05~12:10
公开 张贴报告
