A High Power Density Chip-on-Chip Gan-based Module with Ultra-Low Parasitic Inductance
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zhang Yi   Huazhong University of Science and Technology,State Key Laboratory of Advanced Electromagnetic Engineering and Technology
Room1 /S3&S4 2021年08月27日 16:00~16:15
仅限参会人 口头报告
A Synchronous Boot-strapping Technique with Increased On-time and Improved Efficiency for High-side Gate-drive Power Delivery
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Ellis Nathan Miles  University of California Berkeley
Room2 /S5&S6 2021年08月27日 11:00~11:15
仅限参会人 口头报告
Modeling and Design of A 10MHz Class Φ2 Inverter
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Liu Yongzhi   Huazhong University of Science and Technology,School of Electrical and Electronic Engineering
Room2 /S7&S8 2021年08月27日 15:45~16:00
仅限参会人 口头报告
An Automated Electro-Thermal-Mechanical Co-Simulation Methodology Based on PSpice-MATLAB-COMSOL for SiC Power Module Design
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Yang Yayong  Huazhong University of Science and Technology
Room1 /S1&S2 2021年08月27日 08:45~09:00
仅限参会人 口头报告
An Accurate Analytical Model for Motor Terminal Overvoltage Prediction and Mitigation in SiC Motor Drives
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Wang Neng  Huazhong University of Science and Technology
Room1 /S3&S4 2021年08月27日 14:45~15:00
仅限参会人 口头报告
Analysis of Dynamic Current Balancing in Multichip SiC Power Modules Based on Coupled Parasitic Network Model
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Ge Yuxin  Huazhong University of Science and Technology
Room1 /S3&S4 2021年08月27日 16:30~16:45
仅限参会人 口头报告
An Optimized Parameter Design Method for Desaturation Protection Circuit towards Fast Response Speed and Strong Noise Immunity
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Qian Cheng  Huazhong University of Science and Technology
Room2 /S5&S6 2021年08月27日 10:30~10:45
仅限参会人 口头报告
Modeling and comparison of switching loss between SiC MOSFETs with current source and voltage source gate driver
IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia
Zheng Quan   Huazhong University of Science and Technology,School of Electrical and Electronic Engineering
P /P3 2021年08月27日 12:25~12:30
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