To strengthen the relationship between the microelectronics and magnetism communities in order to accelerate the development of MRAM technology, a MRAM Forum is organized by the IEEE Magnetics Society the day following IEDM to allow IEDM attendees to participate. This will be the 9th MRAM Global Innovation Forum (Hilton Union Square, Plaza room on Lobby level, 7 Dec 2017). This is a one-day forum organized on 7 December 2017 (8:45am - 5:30pm) in the same hotel as IEDM (Hilton Union Square, 333 O'Farrell St, San Francisco). The Forum will consist of 10 invited talks from leading experts and a panel discussion. The program is indicated below. Various MRAM related topics will be covered including STT-MRAM technology, memory and processor demonstrations, spin orbit torque MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this forum marks the 9th edition of the series.