227 / 2016-07-04 12:20:55
Mechanism Simulation of Integrated Circuit Interconnection Electromigration Failure
10779,10780,10781,10782
全文录用
刘 娜 / 北京航空航天大学
The existing life prediction model does not reflect the degradation law of the electrical properties of the interconnect during electromigration process, so there are great limitations in its practical application. This research developed a new failure mechanism degradation model to describe the law of the interconnect performance degradation in the process of electromigration. This paper takes operational amplifier as an example to achieve the failure mechanism injection of the integrated circuit. Through the simulation, this paper shows how the response characteristics of all the measurable signal nodes of the integrated circuit changes with the occurrence and development of electromigration, and meanwhile provides technical support for circuit fault diagnosis and prediction.
重要日期
  • 会议日期

    07月09日

    2016

    07月10日

    2016

  • 07月06日 2016

    初稿截稿日期

  • 07月06日 2016

    终稿截稿日期

  • 07月10日 2016

    注册截止日期

主办单位
湖北众科地质和环境技术服务中心
联系方式
历届会议
移动端
在手机上打开
小程序
打开微信小程序
客服
扫码或点此咨询