Presence of interfacial thermal resistance between semiconductor devices and thermal interface material significantly impacts the heat dissipation efficiency in power device packages. In this study, we propose a novel experimental method for extracting the interfacial thermal resistance of polymer/semiconductor interface using optical-interference contactless thermometry. SU-8/SiC bilayer samples were used to demonstrate the proposed technique, and extracted interfacial thermal resistance was found to increase with the temperature of SU-8 around interface from 130 mm²KW^-1 at 304 K to 410 mm²KW^-1 at 363 K. Transient temperature profiles of the sample were also obtained and an increasing interfacial temperature drop due to interfacial thermal resistance from ~6 to ~60 K was observed.

semiconductor power device,thermal interface material,interfacial thermal resistance