Silicon carbide MOSFETs are often applied in parallel connection because of low monolithic current level. However, current imbalance caused by parallel connection challenges the stable and efficient operation of devices. In the article, influencing factors of current imbalance, including mismatch of device parameters, circuit parameters and drive parameters are analyzed. Meanwhile, methods to suppress the current imbalance are summarized in terms of three influencing factors respectively. Then, these methods are compared and evaluated along perspectives of types of current imbalance suppressed, time, cost, volume, expansibility and integration. The development direction of the current balance methods is prospected. The methods are expected to suppress current imbalance on three factors simultaneously with more merits such as high switching speed.

paralleled; current distribution; balance; method; SiC MOSFETs; influence factors