摘要详情

ID / 提交时间

157 / 2021-10-29 12:00:54

标题

A New V-groove Trench SiC-MOSFET and an Improved Circuit Pattern for a Low-Los High-Power Single-Ended Wireless EV Charger

关键字

Single-Ended,SiC,Electric Vehicle,Wireless Power Transfer,Charger,V-groove trench

主题及专题

Wireless power transfer technology > Devices and systems for short-distance wireless power transfer

状态

全文录用

作者

Shougo Hirooka / Osaka Institute of Technology

Hideki Omori / Osaka Institute of Technology

Kunihiro Sakamoto / National Institute of Advanced Industrial Science and Technology

Toshimitsu Morizane / Osaka Institute of Technology

Hidehito Matayoshi / Osaka Institute of Technology

摘要

In this paper, we propose a new SiC-VMOSFET single-ended converter that realizes a low-cost, compact and lightweight wireless EV charger, which is the key device for the popularization of electric vehicles in recent years. A three-fold transfer power and 1/6 power device loss have been achieved by an improved drive pattern, a newly developed V-groove trench SiC-MOSFET, and a new type of low switching loss circuit topology.

In this paper, we propose a new SiC-VMOSFET single-ended converter that realizes a low-cost, compact and lightweight wireless EV charger, which is the key device for the popularization of electric vehicles in recent years. A three-fold transfer power and 1/6 power device loss have been achieved by an improved drive pattern, a newly developed V-groove trench SiC-MOSFET, and a new type of low switching loss circuit topology.

重要日期

会议日期

07月11日

2023

至

08月18日

2023
11月10日 2021

初稿截稿日期
12月10日 2021

注册截止日期
12月11日 2021

报告提交截止日期

主办单位

IEEE IAS

承办单位

IEEE IAS Student Chapter of Southwest Jiaotong University (SWJTU)
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
IEEE PELS (Power Electronics Society) Student Chapter of HUST